View DH71006_226909.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

TUNING VARACTOR
Selection guide
TUNING VARACTOR
Selection Guide
PAGE SURFACE MOUNT SILICON ABRUPT TUNING VARACTOR 1-32
HIGH Q SILICON ABRUPT JUNCTION TUNING VARACTOR
VBR = 30 V VBR = 45 V 1-34 1-35
SILICON HYPERABRUPT JUNCTION TUNING VARACTOR
1-36
MICROWAVE SILICON HYPERABRUPT JUNCTION TUNING VARACTOR
1-39
A tuning varactor is a P-N diode that acts as a voltage controlled capacitor. These devices perform the same function as the familiar, bulky, air dielectric stacked capacitors featured in traditional broadcast band receivers.
1-31
SALES OFFICES: VISIT OUR WEB SITE AT http://www.temex.net
TUNING VARACTOR
Plastic package Surface Mount Silicon abrupt tuning varactor
SOT23 SURFACE MOUNT SILICON ABRUPT TUNING VARACTOR
Description This series of silicon tuning varactors have an epitaxial mesa design with a high temperature passivation. This technology is used to produce abrupt tuning varactor in SOT23 package. This family is designed for a low cost medium to high volume market that may be supplied in tape and reel for automated pick and place assembly on surface mount circuit boards. Applications The DH71000 series abrupt tuning varactor are offered in a large selection of capacitance range. They provide the highest Q factor (low reverse series resistance) available for a 30 volts silicon device. Typical applications include low noise narrow and moderate frequency bandwidth applications (VCO mainly) from HF to Microwave frequencies (up to 3 GHz). Other applications are voltage tuned filters, phase shifters, delay line, etc. NOTE: Variation of the junction capacitance versus reverse voltage follows this equation: Cj (Vr) = Cj (0 V) 1 + Vr
[
]
Vr : : :
Reverse voltage Built-in potential .7V for Si .5 for abrupt tuning varactor
1-32
SALES OFFICES: VISIT OUR WEB SITE AT http://www.temex.net
TUNING VARACTOR
Plastic package Surface Mount Silicon abrupt tuning varactor
Electrical characteristics at Ta = +25 C Reverse breakdown voltage, Vb = @10 A: 30 V min. Electrical parameters Test Conditions Type Breakdown voltage VBR IR = 10 A V min. Junction capacitance Cj F = 1 MHz VR = 4 V pF
(1)
Tuning ratio
Figure of merit Q VR = 4 V F = 50 MHz typ. 4300 4100 3900 3400 2200 2600 2200
Cj0V/Cj30V typ. 4.0 4.5 4.6 4.7 4.8 4.9 5.0
DH71010 30 DH71016 30 DH71020 30 DH71030 30 DH71045 30 DH71067 30 DH71100 30 (1) Other tolerance on request Temperature ranges: Operating junction (Tj): Packages SOD323 Packages SOT23
1.0 20% 1.6 20% 2.0 20% 3.0 20% 4.5 20% 6.7 10% 10 10%
-55 C to +125 C
Storage:
-65 C to +150 C
SOT23
SOT23
SOT143
DH71010 DH71016 DH71020 DH71030 DH71045 DH71067 DH71100
DH71010-60 DH71016-60 DH71020-60 DH71030-60 DH71045-60 DH71067-60 DH71100-60
DH71010-51 DH71016-51 DH71020-51 DH71030-51 DH71045-51 DH71067-51 DH71100-51
DH71010-53 DH71016-53 DH71020-53 DH71030-53 DH71045-53 DH71067-53 DH71100-53
DH71010-54 DH71016-54 DH71020-54 DH71030-54 DH71045-54 DH71067-54 DH71100-54
DH71010-70 DH71016-70 DH71020-70 DH71030-70 DH71045-70 DH71067-70 DH71100-70
(1) Other configuration available on request. How to order? DH71010 Diode type 51 Package information 51: single SOT23 53: dual common cathode SOT23 54: dual common anode SOT23 60: single SOD323 70: dual SOT143 T3 Conditioning T3: 3000 pieces tape & reel T10: 10000 pieces tape & reel blank: bulk
1-33
SALES OFFICES: VISIT OUR WEB SITE AT http://www.temex.net
TUNING VARACTOR
High Q silicon abrupt junction tuning varactor
HIGH Q SILICON ABRUPT JUNCTION TUNING VARACTOR
VBR 30 V
Description This series of high Q epi-junction microwave tuning varactors (30 V) incorporates a passivated mesa technology. It is well suited for frequency tuning applications up to Ku band. CHIP DIODES Gold dia O CHIP AND PACKAGED DIODES VBR (10 A) 30 V junction capacitance Cj VR = 4 V f = 1 MHZ m typ. EH71004 EH71006 EH71008 EH71010 EH71012 EH71016 EH71020 EH71025 EH71030 EH71037 EH71045 EH71054 EH71067 EH71080 EH71100 EH71120 EH71150 EH71180 EH71200 EH71220 EH71270 EH71330 EH71390 EH71470 EH71560 EH71680 EH71820 EH71999 C2a C2a C2a C2a C2a C2a C2a C2a C2a C2a C2a C2a C2a C2b C2b C2b C2b C2b C2b C2b C2b C2c C2c C2c C2c C2c C2d C2d 50 60 70 80 90 100 110 120 140 150 170 180 200 220 250 270 300 330 350 370 410 450 500 540 590 650 720 800 pF 20 % (2) 0.4 0.6 0.8 1.0 1.2 1.6 2.0 2.5 3.0 3.7 4.5 5.4 10 % (2) 6.7 8.0 10.0 12.0 15.0 18.0 20.0 22.0 27.0 33.0 39.0 47.0 56.0 68.0 82.0 100.0 min. 4500 4500 4400 4300 4200 4100 3900 3600 3400 3200 3000 2800 2600 2400 2200 2000 1800 1700 1500 1400 1300 1200 950 750 650 500 400 300 DH71004 DH71006 DH71008 DH71010 DH71012 DH71016 DH71020 DH71025 DH71030 DH71037 DH71045 DH71054 DH71067 DH71080 DH71100 DH71120 DH71150 DH71180 DH71200 DH71220 DH71270 DH71330 DH71390 DH71470 DH71560 DH71680 DH71820 DH71999 Fig. of merit Q VR = 4 V f = 50 MHZ Type CASE CAPACITANCE Cb Case Cb= 0.18 pF (3) F27d F27d F27d F27d F27d F27d F27d F27d F27d F27d F27d F27d Cb= 0.18 pF (3) F27d F27d F27d F27d F27d F27d F27d F27d F27d F27d F27d F27d F27d F27d F27d F27d min. 3.0 3.4 3.7 4.0 4.3 4.5 4.6 4.6 4.7 4.7 4.8 4.8 4.9 5.0 5.0 5.1 5.1 5.2 5.2 5.2 5.2 5.2 5.2 5.2 5.2 5.2 5.2 5.2 PACKAGED DIODES (1) Standard cases Other cases Tuning ratio CTO/CT30 CASE CAPACITANCE Cb Case Cb= 0.12 pF (3) min. M208 3.3 M208 3.7 M208 4.0 M208 4.3 M208 4.5 M208 4.6 M208 4.7 M208 4.8 M208 4.8 M208 4.8 M208 4.9 M208 4.9 Cb= 0.2 pF (3) BH142 BH142 BH142 BH142 BH142 BH142 BH142 BH142 BH142 BH142 BH142 BH142 BH142 BH142 BH142 BH142 4.9 5.0 5.0 5.1 5.1 5.2 5.2 5.2 5.2 5.2 5.2 5.2 5.2 5.2 5.2 5.2 Tuning ratio CTO/CT30
Characteristics at 25C
Test Conditions Type Case
(1) Custom cases available on request (2) Closer capacitance tolerances available on request (3) CT = Cj + Cb
1-34
Temperature ranges: Operating junction (Tj) : -55 C to +150 C Storage : -65 C to +175 C
SALES OFFICES: VISIT OUR WEB SITE AT http://www.temex.net
TUNING VARACTOR
High Q silicon abrupt junction tuning varactor
VBR 45 V
Description This series of high Q epi-junction microwave tuning varactors (45 V) incorporates a passivated mesa technology. It is well suited for frequency tuning applications up to X band. Chip diodes GOLD Characteristics at 25 C DIA O Test conditions Type Case m typ. EH72004 EH72006 EH72008 EH72010 EH72012 EH72016 EH72020 EH72025 EH72030 EH72037 EH72045 EH72054 EH72067 EH72080 EH72100 EH72120 EH72150 EH72180 EH72200 EH72220 EH72270 EH72330 EH72390 EH72470 EH72560 EH72680 EH72820 EH72999
(1) (2) (3)
Chip and packaged diodes VBR (10 A) 45 V Junction
Capacitance
STANDARD CASES
Packaged diodes (1) OTHER CASES Tuning Ratio CTO/CT45 Tuning Ratio CTO/CT45 Case Capacitance Cb Case min. Cb 3.5 3.9 4.2 4.5 4.7 5.0 5.2 5.4 5.5 5.6 5.7 5.8 Cb 5.9 5.9 6.0 6.0 6.0 6.0 6.0 6.0 6.0 6.0 6.0 6.0 6.0 6.0 6.0 6.0 = 0.12 pF (3) M208 M208 M208 M208 M208 M208 M208 M208 M208 M208 M208 M208 = 0.2pF (3) BH142 BH142 BH142 BH142 BH142 BH142 BH142 BH142 BH142 BH142 BH142 min. 3.7 4.1 4.5 4.7 4.9 5.2 5.5 5.6 5.7 5.7 5.8 5.9 6.0 6.0 6.0 6.0 6.0 6.0 6.0 6.0 6.0 6.0 6.0
Fig. of
Merit
Cj VR = 4 V f = 1 MHZ pF 20 % (2) 0.4 0.6 0.8 1.0 1.2 1.6 2.0 2.5 3.0 3.7 4.5 5.4 10 % (2) 6.7 8.0 10.0 12.0 15.0 18.0 20.0 22.0 27.0 33.0 39.0 10 % (2) 47.0 56.0 68.0 10 % (2) 82.0 100.0
Q VR = 4 V f = 50 MHZ Type min. 3000 2900 2800 2700 2700 2600 2500 2400 2300 2200 2000 1900 1800 1700 1600 1500 1400 1300 1200 1100 1000 900 800 700 600 450 350 250 DH72004 DH72006 DH72008 DH72010 DH72012 DH72016 DH72020 DH72025 DH72030 DH72037 DH72045 DH72054 DH72067 DH72080 DH72100 DH72120 DH72150 DH72180 DH72200 DH72220 DH72270 DH72330 DH72390 DH72470 DH72560 DH72680 DH72820 DH72999 Case Capacitance Cb Case Cb = 0.18 pF (3) F27d F27d F27d F27d F27d F27d F27d F27d F27d F27d F27d F27d Cb =0.18pF (3) F27d F27d F27d F27d F27d F27d F27d F27d F27d F27d F27d Cb = 0.18 pF (3) BH28 BH28 BH28 Cb = 0.4 pF (3) BH141 BH141
C2a C2a C2a C2a C2a C2a C2a C2a C2a C2a C2a C2a C2b C2b C2b C2b C2b C2b C2b C2c C2c C2c C2c C2d C2d C2d C2g C2g
60 80 90 110 110 120 140 150 170 190 210 230 250 280 310 340 380 420 440 470 520 570 620 680 740 820 900 1000
Custom cases available on request Closer capacitance tolerances available on request CT = Cj + Cb
Temperature ranges: Operating junction (Tj) : -55 C to +150 C Storage : -65 C to +175 C
1-35
SALES OFFICES: VISIT OUR WEB SITE AT http://www.temex.net
TUNING VARACTOR
Plastic package, Surface Mount hyperabrupt tuning varactor
PLASTIC PACKAGE, SURFACE MOUNT HYPERABRUPT TUNING VARACTOR
Description This series of silicon tuning varactors consists of hyperabrupt epitaxial devices. They incorporate a passivated mesa technology. This family is designed for a low cost medium to high volume market that may be supplied in tape and reel for automated pick and place assembly on surface mount circuit boards. Application The DH76000 and DH77000 series hyperabrupt tuning varactor are offered in a large selection of capacitance range. They provide the highest Q factor (low reverse series resistance). Typical applications include low noise narrow and moderate frequency bandwidth applications (VCO mainly) from HF to Microwave frequencies (up to 3 GHz). Other applications are voltage tuned filters, phase shifters, delay lines...
20 Volt hyperabrupt junction varactors
Characteristics @ Ta=+25 C Reverse breakdown voltage, Vb = 20 V min. @ 10 A Reverse Current, Ir = 200 nA @ 16 V Total capacitance (pF) Ct f = 1 MHz f=1 MHz Vr = 4 V Vr = 12 V 20 % typ. 1.2 0.6 1.7 0.8 2.4 1.1 3.5 1.6 4.9 2.2 7.0 3.1 10.0 4.5 15.0 6.6 Temperature ranges: Operating junction (Tj) : -55 C to +125 C Storage : -55 C to +150 C Tuning ratio Ct1V/Ct12V Ct1V/Ct20V f = 1 MHz f = 1 MHz typ. typ. 4.1 4.9 4.4 5.4 4.7 5.8 4.9 6.1 5.0 6.4 5.1 6.5 5.2 6.7 5.2 6.8
Test conditions Type DH76010 DH76015 DH76022 DH76033 DH76047 DH76068 DH76100 DH76150
f = 1 MHz Vr = 1 V typ 2.5 3.6 5.2 8.0 11.0 16.0 23.0 35.0
f = 1 MHz Vr = 20 V typ. 0.5 0.7 0.9 1.3 1.7 2.4 3.5 5.1
12 Volt hyperabrupt junction varactors
Characteristics @ Ta=+25 C Reverse breakdown voltage, Vb = 12 V min. @ 10 A Reverse Current, Ir = 200 nA @ 8 V Total capacitance (pF) Ct f = 1 MHz f=1 MHz Vr = 2.5 V Vr = 4 V 20 % typ. 3.5 4.9 7.0 10.0 15.0 1.9 2.7 3.8 5.5 8.1 Temperature ranges: Operating junction (Tj) : -55 C to +125 C Storage : -55 C to +150 C Tuning ratio Ct1V/Ct2.5V Ct1V/Ct4V f = 1 MHz f = 1 MHz typ. typ. 1.7 1.7 1.7 1.7 1.8 3.1 3.2 3.2 3.2 3.3
Test conditions Type DH77033 DH77047 DH77068 DH77100 DH77150
f = 1 MHz Vr = 1 V typ 6.0 8.5 12.0 18.0 27.0
1-36
SALES OFFICES: VISIT OUR WEB SITE AT http://www.temex.net
TUNING VARACTOR
Plastic package, Surface Mount hyperabrupt tuning varactor
Typical junction capacitance versus reverse voltage
Profils in Cj
100.00
10.00
76010 76015 76022 76033 76047 76068 76100 76150
10 100
Cj (pF)
1.00 0.01 0.1
0.10 VR (V)
100
Cj (pF)
10
DH77033 DH77047 DH77068 DH77100 DH77150
0.1
1 1 V (V) 10
1-37
SALES OFFICES: VISIT OUR WEB SITE AT http://www.temex.net
TUNING VARACTOR
Plastic package, Surface Mount hyperabrupt tuning varactor
Packages SOD323 Packages SOT23 SOT23 SOT23 SOT143
DH76010 DH76015 DH76022 DH76033 DH76047 DH76068 DH76100 DH76150 DH77033 DH77047 DH77068 DH77100 DH77150
DH76010-60 DH76015-60 DH76022-60 DH76033-60 DH76047-60 DH76068-60 DH76100-60 DH76150-60 DH77033-60 DH77047-60 DH77068-60 DH77100-60 DH77150-60
DH76010-51 DH76015-51 DH76022-51 DH76033-51 DH76047-51 DH76068-51 DH76100-51 DH76150-51 DH77033-51 DH77047-51 DH77068-51 DH77100-51 DH77150-51
DH76010-53 DH76015-53 DH76022-53 DH76033-53 DH76047-53 DH76068-53 DH76100-53 DH76150-53 DH77033-53 DH77047-53 DH77068-53 DH77100-53 DH77150-53
DH76010-54 DH76015-54 DH76022-54 DH76033-54 DH76047-54 DH76068-54 DH76100-54 DH76150-54 DH77033-54 DH77047-54 DH77068-54 DH77100-54 DH77150-54
DH76010-70 DH76015-70 DH76022-70 DH76033-70 DH76047-70 DH76068-70 DH76100-70 DH76150-70 DH77033-70 DH77047-70 DH77068-70 DH77100-70 DH77150-70
(1) Other configuration available on request. How to order? DH76150 Diode type 51 Package information 51: single SOT23 53: dual common cathode SOT23 54: dual common anode SOT23 60: single SOD323 70: dual SOT143 T3 Conditioning T3: 3000 pieces tape & reel T10: 10000 pieces tape & reel blank: bulk
1-38
SALES OFFICES: VISIT OUR WEB SITE AT http://www.temex.net
TUNING VARACTOR
High Q silicon hyperabrupt junction tuning varactor
HIGH Q SILICON HYPERABRUPT JUNCTION TUNING VARACTOR
Description This series of silicon tuning varactors consists of hyperabrupt epitaxial devices. They incorporate a passivated mesa technology. Packaged or chip devices are available for linear electronic tuning from VHF up to Ku band. Characteristics @ Ta = +25 C Reverse breakdown voltage, Vb = @ 10 A: 20 V min. Reverse current, Ir @ 16 V: 200 nA Figure of Total capacitance (pF) merit (Q) Ct f = 50 MHz f = 1 MHz f = 1 MHz f = 1 MHz f = 1 MHz Vr = 4 V Vr = 1 V Vr = 4 V Vr = 12 V Vr = 20 V typ. typ. 20% typ. typ. 2200 2.5 1.2 0.6 0.5 2000 3.6 1.7 0.8 0.7 1700 5.2 2.4 1.1 0.9 1400 7.7 3.5 1.6 1.3 1000 11 4.9 2.2 1.7 700 16 6.9 3.0 2.4 400 23 10.2 4.5 3.5 140 34 15.2 6.6 5.1 Tuning ratio Ct1V/Ct12V Ct1V/CT20V f = 1 MHz f = 1 MHz typ. typ. 4.1 4.9 4.4 5.4 4.7 5.8 4.9 6.1 5.0 6.4 5.1 6.5 5.2 6.7 5.2 6.8
Test conditions Type Case (1) DH76010 F27d DH76015 F27d DH76022 F27d DH76033 F27d DH76047 F27d DH76068 F27d DH76100 F27d DH76150 F27d (1)
Chip EH76010 EH76015 EH76022 EH76033 EH76047 EH76068 EH76100 EH76150
Custom cases available on request
Temperature ranges: Operating junction (Tj) : -55 C to +150 C Storage : -65 C to +150 C
Typical junction capacitance reverse voltage
Profils in Cj
100.00
10.00
76010 76015 76022 76033 76047 76068 76100 76150
10 100
Cj (pF)
1.00 0.01 0.1
0.10 VR (V)
1-39
SALES OFFICES: VISIT OUR WEB SITE AT http://www.temex.net

▲Up To Search▲

Price & Availability of DH71006

	To Download DH71006 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .